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| MITSUBISHI SEMICONDUCTOR TRIAC BCR08AM-14 LOW POWER USE PLANAR PASSIVATION TYPE BCR08AM-14 OUTLINE DRAWING 5.0 MAX. Dimensions in mm 4.4 VOLTAGE CLASS TYPE NAME T1 TERMINAL T2 TERMINAL GATE TERMINAL CIRCUMSCRIBE CIRCLE 0.7 1.25 1.25 1.3 12.5 MIN. 5.0 MAX. 3.9 MAX. ............................................................... 0.8A ................................................................. 700V q IFGT !, IRGT ! , IRGT # ....................................... 5mA q IT (RMS) q VDRM JEDEC : TO-92 APPLICATION Washing machine, electric fan, air cleaner, other general purpose control applications MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage1 Non-repetitive peak off-state voltage1 Voltage class 14 700 840 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg -- Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value Conditions Commercial frequency, sine full wave 360 conduction, Tc=67C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 0.8 8 0.26 1 0.1 6 0.5 -40 ~ +125 -40 ~ +125 0.23 Unit A A A 2s W W V A C C g Mar.2002 1. Gate open. MITSUBISHI SEMICONDUCTOR TRIAC BCR08AM-14 LOW POWER USE PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) (dv/dt)c Gate trigger current 2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage 4 Parameter Repetitive peak off-state current On-state voltage ! Test conditions Tj=125C, VDRM applied Tc=25C, ITM=1.2A, Instantaneous measurement Tj=25C, VD=6V, RL=6, RG=330 Limits Min. -- -- -- -- -- -- -- -- 0.1 -- 0.5 Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 2.0 2.0 2.0 2.0 5 5 5 -- 50 -- Unit mA V V V V mA mA mA V C/ W V/s Gate trigger voltage 2 @ # ! @ # Tj=25C, VD=6V, RL=6, RG=330 Tj=125C, VD=1/2VDRM Junction to case 3 Tj=125C 2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured at the T2 terminal 1.5mm away from the molded case. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions 1. Junction temperature Tj=125C 2. Rate of decay of on-state commutating current (di/dt)c=-0.4A/ms 3. Peak off-state voltage VD=400V Commutating voltage and current waveforms (inductive load) SUPPLY VOLTAGE (di/dt)c TIME TIME VD TIME MAIN CURRENT MAIN VOLTAGE (dv/dt)c PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS Tc = 25C SURGE ON-STATE CURRENT (A) RATED SURGE ON-STATE CURRENT 10 9 8 7 6 5 4 3 2 1 0 100 23 5 7 101 23 5 7 102 ON-STATE CURRENT (A) 101 7 5 3 2 100 7 5 3 2 10-1 1.0 1.5 2.0 2.5 3.0 3.5 4.0 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Mar.2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR08AM-14 LOW POWER USE PLANAR PASSIVATION TYPE GATE CHARACTERISTICS GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) 3 2 101 VGM = 6V PGM = 1W VGT PG(AV) = 0.1W IGM = 0.5A IFGT I, IRGT I, IRGT III 103 7 5 3 2 102 7 5 3 2 TYPICAL EXAMPLE GATE VOLTAGE (V) 100 7 5 3 2 10-1 7 5 3 VGD = 0.1V 3 5 7 101 2 3 5 7 102 2 3 5 7103 GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C) 7 5 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) GATE CURRENT (mA) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 100 (%) 103 7 5 3 2 102 7 5 3 2 TYPICAL EXAMPLE TRANSIENT THERMAL IMPEDANCE (C/W) 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7105 3 2 JUNCTION TO AMBIENT 102 7 5 3 2 101 7 5 3 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C) JUNCTION TO CASE 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE LOADS ON-STATE POWER DISSIPATION (W) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 360 CONDUCTION RESISTIVE, INDUCTIVE LOADS 0.8 1.0 1.2 1.4 CASE TEMPERATURE (C) 140 120 100 80 60 40 20 0 360 CONDUCTION RESISTIVE, INDUCTIVE LOADS 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) Mar.2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR08AM-14 LOW POWER USE PLANAR PASSIVATION TYPE REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 TYPICAL EXAMPLE 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) 100 80 60 40 20 0 360 CONDUCTION RESISTIVE, INDUCTIVE LOADS 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RMS ON-STATE CURRENT (A) REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C) AMBIENT TEMPERATURE (C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 140 NATURAL CONVECTION NO FINS 120 100 (%) HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 102 7 5 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) TYPICAL EXAMPLE LACHING CURRENT (mA) LACHING CURRENT VS. JUNCTION TEMPERATURE 102 7 5 3 2 101 7 5 3 2 100 7++ 5 T2 , G 3 TYPICAL 2 EXAMPLE 10-1 -40 0 DISTRIBUTION + T2 , G- TYPICAL EXAMPLE HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C) 100 (%) - T2 , G- TYPICAL EXAMPLE 40 80 120 160 JUNCTION TEMPERATURE (C) 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 140 TYPICAL EXAMPLE Tj = 125C 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (C) BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C) 120 100 80 60 40 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) I QUADRANT III QUADRANT Mar.2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR08AM-14 LOW POWER USE PLANAR PASSIVATION TYPE CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s) COMMUTATION CHARACTERISTICS 101 7 TYPICAL EXAMPLE 5 3 2 100 7 5 3 2 10-1 10-1 2 MINIMUM CHARACTERISTICS VALUE 3 5 7 100 CONDITIONS VD = 200V IT = 1A = 500s Tj = 125C III QUADRANT 103 7 5 3 2 102 7 5 3 2 101 0 10 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH TYPICAL EXAMPLE IRGT III IRGT III GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) IFGT I IRGT I I QUADRANT 2 3 5 7 101 23 5 7 101 23 5 7 102 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) GATE CURRENT PULSE WIDTH (s) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6 6V V A RG 6V V A RG TEST PROCEDURE 1 6 TEST PROCEDURE 2 6V V A RG TEST PROCEDURE 3 Mar.2002 |
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